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[ Descriptions ]
| AON6414A Alpha & Omega Semiconductors - N-Channel MOSFET AON6414A 30V N-Channel MOSFET General Description The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 50A < 8mΩ < 10.5mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom |
| AON6414A Freescale - N-Channel MOSFET AON6414A 30V N-Channel MOSFET General Description The AON6414A uses advanced trench technology to provide excellent RDS(ON) , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 50A < 8mΩ < 10.5mΩ D Top View 1 2 3 4 8 7 6 5 G S Absolute Maximum Ratings T |
Related Information
| AON1605 20V P-Channel MOSFET - Alpha & Omega Semiconductors AON1605 20V P-Channel MOSFET General Description The AON1605 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ideal for load switch applications. Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) RDS(ON) (at VGS =-1.8V) -2 |
| AON1610 Plastic Encapsulated Device - ALPHA & OMEGA AOS Semiconductor Product Reliability Report AON1610, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AON1610. Accelerated environmental tests are performed on a specific sample size |
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