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AP30G120ASW Advanced Power Electronics - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

AP30G120ASW RoHS-compliant Product Advanced Power Electronics Corp. Features ▼ High Speed Switching ▼ Low Saturation Voltage V CE(sat)=2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. VCES IC C G C E TO-3P G E Parameter Rating 1200 +30 60 30 120 6 40 208 -55 to 150 -55 to 150 300 1200V 30A Absolute Maximum Ratings Symbol VCES V

AP30G120ASW-HF Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP30G120ASW-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat)=2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free G C E TO-3P Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage VGE Gate-Emitter Voltage IC@TC=25℃ C

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AP3000A-00 SILICON PIN DIODE CHIP DESCRIPTION: The AP3000C-11 is a Passivated Epitaxial Silicon PIN Diode Housed in a Hermetically Sealed Glass Package. This Device is Designed to Cover a Wide Range of Control Applications Such as RF Switching,Phase Shifting, Modulation, Duplexing Limiting and Pul

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