Semiconductor Informations
| AP4953GM Advanced Power Electronics - P-CHANNEL ENHANCEMENT MODE POWER MOSFET AP4953GM Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching D1 G2 S2 D2 D1 D2 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 53mΩ -5A SO-8 S1 G1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resis |
| AP4953GM Advanced Power Electronics - P-CHANNEL ENHANCEMENT MODE POWER MOSFET AP4953GM Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching D1 G2 S2 D2 D1 D2 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 53mΩ -5A SO-8 S1 G1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resis |
| AP400 Diode ( Rectifier ) - American Microsemiconductor |
| AP400-B10 AC Current transducer AP-B10 - LEM AC Current transducer AP-B10 Split core transducer for the electronic measurement AC waveforms current, with galvanic isolation between the primary (High power) and the secondary circuits (Electronic circuit). Switch selectable ranges and RMS 0-5V and 0-10V switch selectable voltage output. IPN = 1 |