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[ Descriptions ]


B1375 Toshiba Semiconductor - PNP Transistor - 2SB1375

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier 2SB1375 Unit: mm Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A, IB = 0.2 A) High power dissipation: PC = 25 W (Tc = 25°C) Collector metal (fin) is covered with mold resin Complementary to 2SD2012 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-b


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Green B130L 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideally Suited for Automated Assembly Low Power Loss, High Efficiency Lead Free Finish, RoHS Compliant (Note 1) Green Molding Compound (No Halogen
B130LAW 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER - Diodes Incorporated

Features Guard Ring Die Construction for Transient Protection Very Low Forward Voltage Drop Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 3 and 4) B130LAW 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Mechanical Data Case: SOD-123 Case Material: Molded Plastic. UL Flamm




Related Part Number

B1436 | B1397 |

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