Semiconductor Informations

File Download: B1375.PDF
| B1375 Toshiba Semiconductor - PNP Transistor - 2SB1375 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier 2SB1375 Unit: mm Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A, IB = 0.2 A) High power dissipation: PC = 25 W (Tc = 25°C) Collector metal (fin) is covered with mold resin Complementary to 2SD2012 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-b |
| B130L 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER - Diodes Incorporated Green B130L 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideally Suited for Automated Assembly Low Power Loss, High Efficiency Lead Free Finish, RoHS Compliant (Note 1) Green Molding Compound (No Halogen |
| B130LAW 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER - Diodes Incorporated Features Guard Ring Die Construction for Transient Protection Very Low Forward Voltage Drop Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 3 and 4) B130LAW 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Mechanical Data Case: SOD-123 Case Material: Molded Plastic. UL Flamm |