Semiconductor Informations
| B1565 ROHM Semiconductor - Power Transistor 2SB1565 Transistors For Power Amplification ( 60V, 3A) 2SB1565 zStructure PNP Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 10.0 4.5 φ3.2 2.8 14.0 zFeatures 1) Low VCE (sat). 2) Excellent electrical characteristics of DC current Gain hFE. 3) Wide SOA. (1)Base (2)Collector (3)Emitter 15.0 12.0 8.0 5.0 1.2 1.3 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 zApplic |
| B1548 PNP Transistor - 2SB1548 - Panasonic Semiconductor Power Transistors 2SB1548, 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374 and 2SD2374A s Features q q q Unit: mm 15.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1548 2SB1548A 2SB1548 Symbol VCBO VCEO VEBO ICP |
| B1559 PNP Transistor - 2SB1559 - Sanken Electric (7 0 Ω ) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1559 160 150 5 8 1 80(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C 2SB1559 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB= 160V VEB= |