Semiconductor Informations
| B649A Unisonic Technologies - PNP Transistor - 2SB649A UNISONIC TECHNOLOGIES CO., LTD PNP SILICON TRANSISTOR 1 2SB649, A BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669, A SOT-89 1 TO-126 1 TO-126C 1 TO-92 *Pb-free plating product number: 2SB649L, 2SB649AL ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB649-x-AB3-R 2SB649L-x-AB3-R 2SB649-x-T6C-K 2SB649L- |
| B649A JCST - PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649, 2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669, A 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -180 V 3. BASE VCEO Collector-Emitter Voltage 2S |
| B643 PNP Transistor - 2SB643 - Panasonic Semiconductor Transistor 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD638 and 2SD639 s Features q M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. s Absolute Maximum Ratings (Ta=25 |
| B647 PNP Transistor - 2SB647 - Hitachi Semiconductor 2SB647, 2SB647A Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD667, A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB647, 2SB647A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter t |