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[ Descriptions ]
| BAS216 NXP Semiconductors - High-speed switching diode DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS216 High-speed switching diode Product speci cation Supersedes data of 1996 Apr 03 1999 Apr 22 Philips Semiconductors Product speci cation High-speed switching diode FEATURES Small ceramic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak |
| BAS216 WEJ - DIODE RoHS BAS216 TC1SS355 200mW SOD-323 SURFACE MOUNTSmall Outline Flat Lead Plastic Package DHigh Speed Switching Diode TAbsolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Value Units .,LPD Power Dissipation 200 mW TSTG Storage Temperature Range -65 to +150 °C TJ Operating Junction Temperature +150 °C VR Reverse Voltage 80 V OVRM Repetitive Peak Reverse Vo |
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