Semiconductor Informations
| BAS28 NXP Semiconductors - High-speed double diode ( Reverse voltage : 75V ) BAS28 High-speed double diode Rev. 3 22 July 2010 Product data sheet 1. Product profile 1.1 General description Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not connected. 1.2 Features and benefits High switching speed: trr ≤ 4 ns Reverse voltage: VR ≤ 75 V Repetitive pe |
| BAS28 Siemens Semiconductor Group - Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) Silicon Switching Diode Array For high-speed switching q Electrically insulated diodes q BAS 28 Type BAS 28 Marking JTs Ordering Code (tape and reel) Q62702-A77 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 s Total power dissipation, TS = 31 ˚C Junction temperature Storage temperature range T |
| BAS100ATB6 SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES - Pan Jit International BAS100ATB6 SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES VOLTAGE 100 Volts FEATURES Smallest 100V Dual, isolated Schottky diode currently available Lead free in comply with EU RoHS 2011, 65, EU directives Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA |
| BAS101 High Voltage Switching Diodes - NXP Semiconductors w w w . D a t a S h e e t 4 U . c o m BAS101; BAS101S High-voltage switching diodes Rev. 01 8 September 2006 Product data sheet 1. Product pro le 1.1 General description High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. Table 1. Product ove |
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