Semiconductor Informations

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| BAV10 NXP Semiconductors - High-speed diode DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAV10 High-speed diode Product speci cation Supersedes data of April 1996 1996 Sep 16 Philips Semiconductors Product speci cation High-speed diode FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 6 ns General application Continuous reverse voltage: max. 60 V Repetitive peak reverse voltage: max. 60 V Re |
| BAV100 NXP Semiconductors - General purpose diodes DISCRETE SEMICONDUCTORS DATA SHEET 1, 3 page (Datasheet) M3D054 BAV100 to BAV103 General purpose diodes Product speci cation Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product speci cation General purpose diodes FEATURES Small hermetically sealed glass SMD package Switching speed: max. 50 ns General application Continuous reverse voltage: max. 50 V, 100 V, 150 V and |
| BAV10 High-speed diode - NXP Semiconductors DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAV10 High-speed diode Product speci cation Supersedes data of April 1996 1996 Sep 16 Philips Semiconductors Product speci cation High-speed diode FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 6 ns Genera |
| BAV100 Silicon Epitaxial Planar Diodes - SURGE |