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Vishay
BAV103-GS08
Rectifier Diode, 1 Phase, 1 Element, 0.25A, 250V V(RRM), Silicon, DO-213AA
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[ Descriptions ]


BAV10 NXP Semiconductors - High-speed diode

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAV10 High-speed diode Product speci cation Supersedes data of April 1996 1996 Sep 16 Philips Semiconductors Product speci cation High-speed diode FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 6 ns General application Continuous reverse voltage: max. 60 V Repetitive peak reverse voltage: max. 60 V Re
BAV100 NXP Semiconductors - General purpose diodes

DISCRETE SEMICONDUCTORS DATA SHEET 1, 3 page (Datasheet) M3D054 BAV100 to BAV103 General purpose diodes Product speci cation Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product speci cation General purpose diodes FEATURES Small hermetically sealed glass SMD package Switching speed: max. 50 ns General application Continuous reverse voltage: max. 50 V, 100 V, 150 V and


Related Information


BAV10 High-speed diode - NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAV10 High-speed diode Product speci cation Supersedes data of April 1996 1996 Sep 16 Philips Semiconductors Product speci cation High-speed diode FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 6 ns Genera
BAV100 Silicon Epitaxial Planar Diodes - SURGE






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