Semiconductor Informations
| BAV199DW Jiangsu Changjiang Electronics - Multi-Chip DIODES JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes BAV199DW FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Multi-Chip DIODES SOT-363 Collector current IF : 200 mA Collector-base voltage VR : 85 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ MARKING:K52 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Reverse breakdown volta |
| BAV199DW Diodes Incorporated - QUAD SURFACE MOUNT LOW LEAKAGE DIODE BAV199DW QUAD SURFACE MOUNT LOW LEAKAGE DIODE Features Mechanical Data Surface Mount Package Ideally Suited for Automated Insertion Very Low Leakage Current Lead Free, RoHS Compliant (Note 3) "Green" Device (Notes 4 and 5) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: L |
| BAV10 High-speed diode - NXP Semiconductors DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAV10 High-speed diode Product speci cation Supersedes data of April 1996 1996 Sep 16 Philips Semiconductors Product speci cation High-speed diode FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 6 ns Genera |
| BAV100 Silicon Epitaxial Planar Diodes - SURGE |
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