Semiconductor Informations

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| BAW56 Philipss - 75V, High-speed double diode DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAW56 High-speed double diode Product speci cation Supersedes data of 1996 Sep 17 1999 May 11 Philips Semiconductors Product speci cation High-speed double diode FEATURES Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forwar |
| BAW56 Vishay Telefunken - Dual Surface Mount Switching Diode www.vishay.com BAW56 Vishay Semiconductors Small Signal Switching Diode, Dual 3 12 MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes, options: 18, 10K per 13" reel (8 mm tape), 10K, box 08, 3K per 7" reel (8 mm tape), 15K, box FEATURES Silicon epitaxial planar diode Fast switching dual diode with common anode AEC-Q101 qualified Base P, N-E3 - RoHS-compliant, commercial gr |
| BAW100 SILICON SWITCHING DIODES - Central Semiconductor BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-143 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-1 |
| BAW100 Silicon Switching Diode Array - Kexin SMD Type Silicon Switching Diode Array BAW100 Features For high-speed switching Electrically insulated diodes Diodes Unit: mm A b s o lu te M a x im u m R a tin g s T a = 2 5 P aram eter R e ve rs e vo lta g e P e a k re ve rs e vo lta g e F orw ard current S urge forw ard current, t = 1 s T o |