Semiconductor Informations
| BAW56W Philipss - High-speed double diode DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BAW56W High-speed double diode Product speci cation Supersedes data of 1996 Sep 17 1999 May 11 Philips Semiconductors Product speci cation High-speed double diode FEATURES Very small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak |
| BAW56W Won-Top Electronics - SURFACE MOUNT FAST SWITCHING DIODE |
| BAW100 SILICON SWITCHING DIODES - Central Semiconductor BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-143 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-1 |
| BAW100 Silicon Switching Diode Array - Kexin SMD Type Silicon Switching Diode Array BAW100 Features For high-speed switching Electrically insulated diodes Diodes Unit: mm A b s o lu te M a x im u m R a tin g s T a = 2 5 P aram eter R e ve rs e vo lta g e P e a k re ve rs e vo lta g e F orw ard current S urge forw ard current, t = 1 s T o |