Semiconductor Informations

File Download: BAW56WT1.PDF
| BAW56WT1 Motorola Semiconductors - Dual Switching Diode MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAW56WT1, D Dual Switching Diode CATHODE 1 3 ANODE 2 BAW56WT1 Motorola Preferred Device MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Max 70 200 500 Unit Vdc mAdc mAdc 1 2 3 CASE 419 02, STYLE 4 SC 70, SOT 323 THERMAL CHARACTERISTICS Characteristic Total Dev |
| BAW56WT1 ON - Dual Switching Diode BAW56WT1 Preferred Device Dual Switching Diode, Common Anode Features Pb Free Package is Available http:, , onsemi.com CATHODE 1 2 CATHODE Symbol VR IF IFM(surge) Max 70 200 500 Unit V mA mA 3 1 ANODE 3 MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Forward Current Peak Forward Surge Current MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings ar |
| BAW100 SILICON SWITCHING DIODES - Central Semiconductor BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-143 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-1 |
| BAW100 Silicon Switching Diode Array - Kexin SMD Type Silicon Switching Diode Array BAW100 Features For high-speed switching Electrically insulated diodes Diodes Unit: mm A b s o lu te M a x im u m R a tin g s T a = 2 5 P aram eter R e ve rs e vo lta g e P e a k re ve rs e vo lta g e F orw ard current S urge forw ard current, t = 1 s T o |