Semiconductor Informations

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| BC635 Motorola Inc - High Current Transistors MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC635, D High Current Transistors NPN Silicon COLLECTOR 2 3 BASE 1 EMITTER BC635 BC637 BC639 MAXIMUM RATINGS Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C O |
| BC635 NXP Semiconductors - NPN medium power transistors DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product speci cation Supersedes data of 1997 Mar 12 1999 Apr 23 Philips Semiconductors Product speci cation NPN medium power transistors FEATURES High current (max. 1 A) Low voltage (max. 80 V). APPLICATIONS Driver stages of audio, video amplifiers. DESCRIPTION NPN transistor in a TO- |
| BC6130 Fully Qualified Single-chip Bluetooth v2.1 + EDR system - CSR _`SNPM=nck Data Sheet Features - Next generation, high-quality, low-cost, mono headset solution with extremely low-cost eBOM - World's longest talk time: up to 18 hours time from a small 120mAh battery - Proximity Pairing (heaset initiated pairing) - Advanced Multipoint - Programmable Audio Prompts |
| BC6145 Fully Qualified Single-chip Bluetooth v3.0 System - CSR Features - - - - - - - - - - - - - - - - - 6th generation 1-mic CVC audio enhancements A2DP v1.2 for high-quality mono music streaming Supports mSBC wideband speech codec Programmable audio prompts: available from either EEPROM or a low-cost SPI flash Bidirectional noise reduction: Hear and Be He |