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BC858B ROHM Semiconductor - PNP General Purpose Transistor

Transistors BC858BW , BC858B PNP General Purpose Transistor BC858BW , BC858B zFeatures 1) BVCEO < -30V (IC=-1mA) 2) Complements the BC848B , BC848BW. zPackage, marking and packaging specifications Paet No. Pakaging type Marking Code Basic ordering unit (pieces) BC858BW UMT3 G3K T106 3000 BC858B SST3 G3K T116 3000 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Co
BC858B STMicroelectronics - SMALL SIGNAL PNP TRANSISTORS

BC857 BC858 SMALL SIGNAL PNP TRANSISTORS Type BC857A BC857B BC858A BC858B Marking 3E 3F 3J 3K s SILICON EPITAXIAL PLANAR PNP TRANSISTORS s MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS s VERY LOW NOISE AF AMPLIFIER s NPN COMPLEMENTS FOR BC857 IS BC847 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS S ym b o l Parameter VCES V CBO V CEO V EBO IC I

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BC807 Silicon PNP transistor - FOSHAN BLUE ROCKET

BC807 Rev.E Mar.-2016 DATA SHEET 描述 , Descriptions SOT-23 塑封封 PNP 半 三 管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 , Features IC 大, BC817 互 。 High IC ,complementary pair with BC817. 用途 , Applications 用于一般功率放大及 路。 Genera
BC807 EPITAXIAL PLANAR PNP TRANSISTOR - KEC

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Complementary to BC817. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO -50 -45 Emitter-Base Voltage VEBO -5 Collector Current IC -800

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PNP Small Signal Transistor
BC858A,BC858B,BC858C. VCE=-30V hfe. hFE. KΩ. µS. BC858 C. 3x10-4. VCE=-5V. IC=-2mA f=1KHz. VCE=-5Vdc, IC=-2mA. DC Current Gain (Note3). Small Signal Current ...
BC856 SERIES BC857 SERIES BC858 SERIES SURFACE MOUNT ...
DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856, BC857 and BC858 Series devices are silicon PNP transistors manufactured by the epitaxial planar process, epoxy.
BC856B, BC857B, BC858A - General Purpose Transistors
BC856B, BC857B, BC858B. BC857C. hFE. -. -. -. 125. 220. 420. 90. 150. 270. 180. 290. 520 ... BC857/BC858. Figure 1. Normalized DC Current Gain. IC, COLLECTOR ...
BC856; BC857; BC858 PNP general purpose transistors
Jan 16, 2004 ... SYMBOL. PARAMETER. CONDITIONS. MIN. MAX. UNIT. VCBO collector-base voltage open emitter. BC856. -. -80. V. BC857. -. -50. V. BC858.
BC856; BC857; BC858
Jul 1, 2022 ... BC856B; BC857B; BC858B: DC current gain as a function of collector current; typical values mgt716. 0. - 1200. - 1000. - 800. - 600. - 400. - 200.
BC858BW,BC858B : Transistors
BC858BW / BC858B. Transistors. Rev.A. 1/4. PNP General Purpose Transistor. BC858BW / BC858B. ○Features. 1) BVCEO < -30V (IC=-1mA). 2) Complements the BC848B ...
Full Material Declaration for BC858B-Q
Apr 7, 2025 ... 表示该有害物质至少在该部件的某一均质材料中的含量超出GB/T 26572 规定的限量要求. Indicates that said hazardous substance contained in at least ...
BCX54/BCX55/BCX56
ORDERING INFORMATION. Type No. Marking. Package Code. BCX54. BA. SOT-89. BCX54-10. BC. SOT-89. BCX54-16. BD. SOT-89. BCX55. BE. SOT-89. BCX55-10. BG. SOT-89.
BC856; BC857; BC858 PNP general purpose transistors
Jan 16, 2004 ... BC856B; BC857B; BC858B. 220. −. 475. BC857C. 420. −. 800. VCEsat collector-emitter saturation voltage. IC = −10 mA; IB = −0.5 mA −. −75. −300.
PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856, BC857 ...
DESCRIPTION. SYMBOL. BC856 BC857. BC858. Collector Base Voltage. VCBO. 80. 50. 30. Collector Emitter Voltage. VCEO. 65. 45. 30. Emitter Base Voltage. VEBO.
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