Semiconductor Informations
| BCF29 NXP Semiconductors - PNP general purpose transistors DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCF29; BCF30 PNP general purpose transistors Product speci cation Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 22 Philips Semiconductors Product speci cation PNP general purpose transistors FEATURES Low current (max. 100 mA) Low voltage (max. 32 V). APPLICATIONS Low level, low noise general p |
| BCF29 Diotec Semiconductor - Surface mount Si-Epitaxial PlanarTransistors BCF 29, BFC 30 PNP General Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren f r die Oberfl chenmontage Power dissipation Verlustleistung 250 mW SOT-23 (TO-236) 0.01 g 2.9 ±0.1 0.4 3 1.1 Plastic case Kunststoffgeh use 1.3 ±0.1 Type Code 1 2 2.5 max Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Geh usemateria |
| BCF020T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP - BeRex BCF020T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 m x 200 m) The BeRex BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 200 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain a |
| BCF030T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP - BeRex BCF030T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 m x 300 m) The BeRex BCF030T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 300 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain a |
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