Semiconductor Informations
| BD139 NXP Semiconductors - 1.5A, 80V, NPN Power Transistor DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD135; BD137; BD139 NPN power transistors Product speci cation Supersedes data of 1997 Mar 04 1999 Apr 12 Philips Semiconductors Product speci cation NPN power transistors FEATURES High current (max. 1.5 A) Low voltage (max. 80 V). APPLICATIONS Driver stages in hi-fi amplifiers and television circuits. DESCRIPTION NPN power transist |
| BD139 STMicroelectronics - Complementary low voltage transistor BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features - Products are pre-selected in DC current gain Application - General purpose Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the com |
| BD101 RECTIFIER DIODE - Sinyork Varactor Diode Peak Repetitive Reverse Voltage Part Number V RRM SOD-723 (P.28) 1S513 (800M H- VCO) 1S515 (1.9G H- VCO) 1S526 (2.4G H- VCO) SOD-523 1S402 1S403 1S404 1S405 1S407 1S409 1S410 1S413 1S415 1S417 w w a D . w (P.28) ta Sh t e e 4U V 15 15 15 30 30 34 34 34 15 30 15 15 30 15 .c |
| BD101W RECTIFIER DIODE - Sinyork Varactor Diode Peak Repetitive Reverse Voltage Part Number V RRM SOD-723 (P.28) 1S513 (800M H- VCO) 1S515 (1.9G H- VCO) 1S526 (2.4G H- VCO) SOD-523 1S402 1S403 1S404 1S405 1S407 1S409 1S410 1S413 1S415 1S417 w w a D . w (P.28) ta Sh t e e 4U V 15 15 15 30 30 34 34 34 15 30 15 15 30 15 .c |