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[ Descriptions ]
| BD239 Power Innovations Limited - NPN SILICON POWER TRANSISTORS BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD240 Series 30 W at 25°C Case Temperature 2 A Continuous Collector Current 4 A Peak Collector Current Customer-Specified Selections Available B C E q q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical c |
| BD239 Fairchild Semiconductor - Medium Power Linear and Switching Applications BD239, A, B, C BD239, A, B, C Medium Power Linear and Switching Applications Complement to BD240, A, B, C respectively 1 TO-220 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO Parameter Collector-Emitter Voltage : BD239 : BD239A : BD239B : BD239C Collector-Emitter Voltage : BD239 : BD239A : BD239B : BD239C Emitter-Bas |
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