Semiconductor Informations

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| BDW23 Power Innovations Limited - NPN SILICON POWER DARLINGTONS BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BDW24, BDW24A, BDW24B and BDW24C 50 W at 25°C Case Temperature 6 A Continuous Collector Current Minimum hFE of 750 at 3 V, 2 A B C E q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the moun |
| BDW23 Fairchild Semiconductor - Hammer Drivers/ Audio Amplifiers Applications BDW23, A, B, C BDW23, A, B, C Hammer Drivers, Audio Amplifiers Applications Power Darlington TR Complement to BDW24, BDW24A, BDW24B and BDW24C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDW23 : BDW23A : BDW23B : BDW23C VCEO Collector-Emitter Voltage |
| BDW21 Bipolar NPN Device - Seme LAB BDW21 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max |
| BDW21C Bipolar NPN Device in a Hermetically sealed TO3 Metal Package - Seme LAB BDW21C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) ma |