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| Microchip USA | 240 | Visit Site | |||
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| Fmall Co., Limited | 10,490 | 0.4241 | Visit Site | ||
| Chipsmall Limited | 26,000 | 25.2 | Visit Site | ||
| SHENGYU ELECTRONICS | 16,431 | 0.7841 | Visit Site | ||
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File Download: BDW47G.PDF
[ Descriptions ]
| BDW47G ON Semiconductor - Darlington Complementary Silicon Power Transistors BDW42G (NPN), BDW46G, BDW47G (PNP) Darlington Complementary Silicon Power Transistors This series of plastic, medium power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features High DC Current Gain hFE = 2500 (typ) @ IC = 5.0 Adc. Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min) BDW46 100 Vdc (min) B |
Related Information
| BDW21 Bipolar NPN Device - Seme LAB BDW21 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max |
| BDW21C Bipolar NPN Device in a Hermetically sealed TO3 Metal Package - Seme LAB BDW21C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) ma |
Related Part Number
BD9897FS | BD3702FV |BDX37 | BD136 |
BD9247F | BDW84B |