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NXP Semiconductors
BDX35
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
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[ Descriptions ]
| BDX35 NXP Semiconductors - NPN switching transistors DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BDX35; BDX36; BDX37 NPN switching transistors Product speci cation Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 16 Philips Semiconductors Product speci cation NPN switching transistors FEATURES High current (max. 5 A) Low voltage (max. 75 V). APPLICATIONS High-current switching in power applica |
| BDX35 SavantIC - SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX35 DESCRIPTION ·With TO-126 package ·High current (Max: 5A) APPLICATIONS ·High current switching in power applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IBM PT Tj Tstg PARAMETER Collector-base voltage Co |
Related Information
| BDX10 Bipolar NPN Device - Seme LAB BDX10 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) m |
| BDX11 Bipolar NPN Device - Seme LAB BDX11 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max |
Related Part Number
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