Semiconductor Informations

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| BDX54C STMicroelectronics - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features - Good hFE linearity - High fT frequency - Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application - Audio amplifiers - Linear and switching industrial equipment Description The devices are manufactured in planar base island technology with monolithic Darlington configu |
| BDX54C Fairchild Semiconductor - Hammer Drivers/ Audio Amplifiers Applications Power Liner and Switching Applications BDX54, A, B, C BDX54, A, B, C Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Power Darlington TR Complement to BDX53, BDX53A, BDX53B and BDX53C respectively 1 TO-220 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BDX54 : BDX54A : BDX54B : BDX54 |
| BDX10 Bipolar NPN Device - Seme LAB BDX10 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) m |
| BDX11 Bipolar NPN Device - Seme LAB BDX11 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max |