Semiconductor Informations

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| BDY53 ETC - NPN SILICON TRANSISTORS DIFFUSED MESA |
| BDY53 Inchange Semiconductor - Silicon NPN Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY53 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)=60V(Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.1 V(Max)@ IC = 4A ·High Switching Speed APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC |
| BDY12 NPN Silicon Planar Trnasistors - Siemens Semiconductor Group |
| BDY12-10 NPN Silicon Planar Trnasistors - Siemens Semiconductor Group |