Semiconductor Informations
Search BF1009 Datasheet (PDF)
Infineon
BF1009SRE6327
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Microchip USA | 238 | Visit Site | |||
| Component Stockers USA | 616 | 99.99 | Visit Site | ||
| Win Source | 20 | Visit Site | |||
| Worldway Electronics | 6,823 | Visit Site | |||
| Fmall Co., Limited | 10,250 | 0.0893 | Visit Site | ||
| Anlinkda | 34,189 | 0.131 | Visit Site | ||
| RC Electronics | 28,884 | 0.1 | Visit Site | ||
Powered by Octopart | |||||
File Download: BF1009.PDF
[ Descriptions ]
| BF1009 Siemens Semiconductor Group - Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network BF 1009 Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GH- Operating voltage 9 V Integrated stabilized bias network 3 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 1009 Marking Ordering Code Pin Configuration JKs Q62702-F1613 1 = S 2=D Package 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Dra |
| BF1009S Siemens Semiconductor Group - Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) BF 1009S Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GH- Operating voltage 9V Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Q62702-F1628 Pin Configuration 1=S 2=D 3 = G2 4 = G1 Package SOT-143 BF 1009S JLs Maximum Ratings Parameter Drain-source voltage Symbol Val |
Related Information
| BF1005 Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) - Siemens Semiconductor Group BF 1005 Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GH- Operating voltage 5V Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 1005 Marking Ordering Code Pin Configuration MZs Q627 |
| BF1005 Silicon N-Channel MOSFET Tetrode - Infineon Technologies AG Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1 GHz Operating voltage 5V Integrated biasing network Pb-free (RoHS compliant) package1) Qualified according AEC Q101 BF1005... AGC RF Input Drain RF Output G2 + DC G1 GND ESD (Electrostatic discharge) s |
Related Part Number
BF-484 | BF959 |BFQ17 | BF200 |
BF484 | BF-483 |