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Infineon
BF1009SE6327HTSA1
Trans RF MOSFET N-CH 12V 0.025A 4-Pin(3+Tab) SOT-143
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[ Descriptions ]


BF1009 Siemens Semiconductor Group - Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network

BF 1009 Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GH- Operating voltage 9 V Integrated stabilized bias network 3 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 1009 Marking Ordering Code Pin Configuration JKs Q62702-F1613 1 = S 2=D Package 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Dra
BF1009S Siemens Semiconductor Group - Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)

BF 1009S Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GH- Operating voltage 9V Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Q62702-F1628 Pin Configuration 1=S 2=D 3 = G2 4 = G1 Package SOT-143 BF 1009S JLs Maximum Ratings Parameter Drain-source voltage Symbol Val


Related Information


BF1005 Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) - Siemens Semiconductor Group

BF 1005 Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GH- Operating voltage 5V Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 1005 Marking Ordering Code Pin Configuration MZs Q627
BF1005 Silicon N-Channel MOSFET Tetrode - Infineon Technologies AG

Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1 GHz Operating voltage 5V Integrated biasing network Pb-free (RoHS compliant) package1) Qualified according AEC Q101 BF1005... AGC RF Input Drain RF Output G2 + DC G1 GND ESD (Electrostatic discharge) s




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