Semiconductor Informations
| BF959 Motorola Inc - VHF Transistor(NPN) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BF959, D VHF Transistor NPN Silicon COLLECTOR 1 3 BASE 2 EMITTER BF959 MAXIMUM RATINGS Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage J |
| BF959 ON Semiconductor - VHF Transistor(NPN Silicon) BF959 VHF Transistor NPN Silicon Features Pb Free Packages are Available* http:, , onsemi.com COLLECTOR 1 Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg 55 to +150 W mW, °C °C 1 2 Symbol RqJA RqJC Max 200 83.3 Unit °C, W °C, W BF959 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb Free Package 3 TO 92 CASE 29 STYLE 21 BF 959 AYWW G G mW mW, °C Value 20 30 3.0 1 |
| BF900 Sicherungshalter - Inter Control Type BF900 Sicherungshalter IEC 60127-6 250V 6,3A Bezeichnung , Kennzeichnung Bestellnummer MBL Isoliermaterial Kontakte Gewicht Nennstrom Nennspannung Verlustleistung (Tu < 40°C) Kontaktwiderstand Isolationswiderstand (Kontakte) Durchschlagfestigkeit Verpackung Approbationen Sicherungshalter f |
| BF901 Silicon n-channel dual gate MOS-FETs - NXP Semiconductors DISCRETE SEMICONDUCTORS DATA SHEET BF901; BF901R Silicon n-channel dual gate MOS-FETs Product speci cation File under Discrete Semiconductors, SC07 November 1992 Philips Semiconductors Product speci cation Silicon n-channel dual gate MOS-FETs FEATURES Intended for low voltage operation Short |
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