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BF998 NXP Semiconductors - Silicon N-channel dual-gate MOS-FETs

DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Silicon N-channel dual-gate MOS-FETs Product specification BF998; BF998R FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz. APP

BF998 Vishay Telefunken - N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode

BF998, BF998R, BF998RW Vishay Telefunken N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance D Low input capacitance D High AGC-range D High gai

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