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BF998 NXP Semiconductors - Silicon N-channel dual-gate MOS-FETs

DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Silicon N-channel dual-gate MOS-FETs Product specification BF998; BF998R FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz. APP

BF998 Vishay Telefunken - N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode

BF998, BF998R, BF998RW Vishay Telefunken N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance D Low input capacitance D High AGC-range D High gai

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BF900 Sicherungshalter - Inter Control

Type BF900 Sicherungshalter IEC 60127-6 250V 6,3A Bezeichnung , Kennzeichnung Bestellnummer MBL Isoliermaterial Kontakte Gewicht Nennstrom Nennspannung Verlustleistung (Tu < 40°C) Kontaktwiderstand Isolationswiderstand (Kontakte) Durchschlagfestigkeit Verpackung Approbationen Sicherungshalter f

BF901 Silicon n-channel dual gate MOS-FETs - NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BF901; BF901R Silicon n-channel dual gate MOS-FETs Product speci cation File under Discrete Semiconductors, SC07 November 1992 Philips Semiconductors Product speci cation Silicon n-channel dual gate MOS-FETs FEATURES Intended for low voltage operation Short

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