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| BLH3355 SHANGHAI BELLING - NPN EPITAXIAL SILICON RF TRANSISTOR CHIP BLH3355 NPN EPITAXIAL SILICON RF TRANSISTOR CHIP (BLH3355) Description NPN epitaxial silicon RF transistor for microwave low-noise amplification Features Low noise and high gain bandwidth product High power gain Applications UHF , VHF wide band amplifier Structure Planar type Electrodes: Aluminum alloy Backside metal: Au alloy Size Chip size: 370 m ×370 m Chip thickness: 220±20 m. Pad si |
Related Information
| BLH3355 NPN EPITAXIAL SILICON RF TRANSISTOR CHIP - SHANGHAI BELLING BLH3355 NPN EPITAXIAL SILICON RF TRANSISTOR CHIP (BLH3355) Description NPN epitaxial silicon RF transistor for microwave low-noise amplification Features Low noise and high gain bandwidth product High power gain Applications UHF , VHF wide band amplifier Structure Planar type Electrodes: Alum |
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