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| BLP8G20S-80P NXP Semiconductors - Power LDMOS transistor BLP8G20S-80P Power LDMOS transistor Rev. 2 13 October 2014 Product data sheet 1. Product profile 1.1 General description 80 W LDMOS transistor for base station applications at frequencies from 1800 MH- to 2200 MHz. Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common Doherty demo board. Test signal 2-carrier W-CDMA f (MHz) 1805 to 1880 1880 to 1920 2110 to |
| BLP8G20S-80P NXP Semiconductors - Power LDMOS transistor BLP8G20S-80P Power LDMOS transistor Rev. 2 13 October 2014 Product data sheet 1. Product profile 1.1 General description 80 W LDMOS transistor for base station applications at frequencies from 1800 MH- to 2200 MHz. Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common Doherty demo board. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) |
Related Information
| BLP8G20S-80P Power LDMOS transistor - NXP Semiconductors BLP8G20S-80P Power LDMOS transistor Rev. 2 13 October 2014 Product data sheet 1. Product profile 1.1 General description 80 W LDMOS transistor for base station applications at frequencies from 1800 MH- to 2200 MHz. Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in |
| BLP8G20S-80P Power LDMOS transistor - NXP Semiconductors BLP8G20S-80P Power LDMOS transistor Rev. 2 13 October 2014 Product data sheet 1. Product profile 1.1 General description 80 W LDMOS transistor for base station applications at frequencies from 1800 MH- to 2200 MHz. Table 1. Typical performance Typical RF performance per section at Tcase = 25 C |
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