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NXP Semiconductors
BLW86
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Tactical IC USA | 7,031 | 27.095 | Visit Site | ||
| Aztech | 5,898 | 50.99 | Visit Site | ||
| Advanced Electronics | 8,164 | 3.41 | Visit Site | ||
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File Download: BLW86.PDF
[ Descriptions ]
| BLW86 NXP Semiconductors - HF/VHF power transistor DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF, VHF power transistor Product speci cation August 1986 Philips Semiconductors Product speci cation HF, VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed |
| BLW86 ASI - NPN SILICON RF POWER TRANSISTOR BLW86 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW86 is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: Common Emitter PG = 7.0 dB at 40 W, 175 MH- Omnigold™ Metalization System E C Ø.125 NOM. FULL R J .125 B C D F E E MAXIMUM RATINGS IC VCBO VCE0 VEBO PDISS TJ TSTG θJC 5.0 A 65 V 35 V 4.0 V 60 W @ TC |
Related Information
| BLW86 HF/VHF power transistor - NXP Semiconductors DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF, VHF power transistor Product speci cation August 1986 Philips Semiconductors Product speci cation HF, VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f. transmitte |
| BLW86 NPN SILICON RF POWER TRANSISTOR - ASI BLW86 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW86 is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: Common Emitter PG = 7.0 dB at 40 W, 175 MH- Omnigold™ Metalization System E C Ø.125 NOM. FULL R J .125 |
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