Semiconductor Informations

File Download: BS107P.PDF
| BS107P Zetex Semiconductors - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=23Ω BS107P D G S REFER TO BS107PT FOR GRAPHS E-Line TO92 Compatible SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE 200 0.12 2 ±20 500 -55 to +150 UNIT V A A V mW °C ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Voltag |
| BS107P Diodes - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS107P 200V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET Features BVDSS > 200V RDS(ON) ≤ 23Ω @ VGS= 2.6V ID = 120mA Maximum Continuous Drain Current Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: E-Line (TO-92 Compatible) Case Material: Molded Plasti |
| BS107P N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET - Zetex Semiconductors N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=23Ω BS107P D G S REFER TO BS107PT FOR GRAPHS E-Line TO92 Compatible SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE 200 0.12 2 ±20 500 -55 to +150 UNIT V A A V mW °C ABSOLUTE MAXIMUM RATINGS. PARAMETER |
| BS107P N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET - Diodes BS107P 200V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET Features BVDSS > 200V RDS(ON) ≤ 23Ω @ VGS= 2.6V ID = 120mA Maximum Continuous Drain Current Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards |