Semiconductor Informations
| BS170 TMOS FET Switching(N-Channel-Enhancement) - Motorola Inc MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS170, D TMOS FET Switching N Channel Enhancement 1 DRAIN BS170 2 GATE 3 SOURCE ® MAXIMUM RATINGS Rating Drain Source Voltage Gate Source Voltage Continuous Non repetitive (tp ≤ 50 s) Drain Current(1) Total Device Dissipation |
| BS170 N-channel vertical D-MOS transistor - NXP Semiconductors DISCRETE SEMICONDUCTORS DATA SHEET BS170 N-channel vertical D-MOS transistor Product speci cation File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product speci cation N-channel vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor |
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