Semiconductor Informations
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File Download: BS170.PDF
[ Descriptions ]
| BS170 Motorola Inc - TMOS FET Switching(N-Channel-Enhancement) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS170, D TMOS FET Switching N Channel Enhancement 1 DRAIN BS170 2 GATE 3 SOURCE ® MAXIMUM RATINGS Rating Drain Source Voltage Gate Source Voltage Continuous Non repetitive (tp ≤ 50 s) Drain Current(1) Total Device Dissipation @ TA = 25°C Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID PD TJ, Tstg Val |
| BS170 NXP Semiconductors - N-channel vertical D-MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET BS170 N-channel vertical D-MOS transistor Product speci cation File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product speci cation N-channel vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. F |
Related Information
| BS107P N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET - Zetex Semiconductors N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=23Ω BS107P D G S REFER TO BS107PT FOR GRAPHS E-Line TO92 Compatible SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE 200 0.12 2 ±20 500 -55 to +150 UNIT V A A V mW °C ABSOLUTE MAXIMUM RATINGS. PARAMETER |
| BS107P N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET - Diodes BS107P 200V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET Features BVDSS > 200V RDS(ON) ≤ 23Ω @ VGS= 2.6V ID = 120mA Maximum Continuous Drain Current Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards |
Related Part Number
BS003F3P6 | BSS123W |BSS138W | BSS149 |
BSS149 | BSC24-01N40 |