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BSS123 NXP Semiconductors - 100V, 150mA, N-channel enhancement mode vertical D-MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET BSS123 N-channel enhancement mode vertical D-MOS transistor Product speci cation File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product speci cation N-channel enhancement mode vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. DESCRIPTION N-channel enhancement m
BSS123 Zetex Semiconductors - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 JANUARY 1996 PARTMARKING DETAIL 7 SA BSS123 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Voltage Peak Gate-Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS VDGR ID IDM VGS VGSM P



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