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[ Descriptions ]

BSS123W Diodes - N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary V(BR)DSS 100V RDS(ON) 6.0Ω @ VGS = 10V ID TA = +25°C 170mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Small Servo Motor Control Power MOSFET Gate Drivers Switching Applications BSS123W N-CHANNEL ENHANCEME
BSS123W Fairchild Semiconductor - N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS123W N-Channel Logic Level Enhancement Mode Field Effect Transistor December 2015 BSS123W N-Channel Logic Level Enhancement Mode Field Effect Transistor Features 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V High Density Cell Design for Low RDS(ON) Rugged and Reliable Ultra Small Surface Mount Package Very Low Capacitance Fast Switching Speed Lead Free ,



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