Semiconductor Informations
Search BSS123W Datasheet (PDF)
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Rochester Electronics | 12 | Visit Site | |||
| Arrow Electronics | 31 | 0.1898 | Visit Site | ||
| Classic Components | 2,472 | Visit Site | |||
| Worldway Electronics | 22,459 | Visit Site | |||
| Esaler Electronic | 3,000 | 0.102 | Visit Site | ||
| Onzuu | 8,442 | Visit Site | |||
| UnikeyIC | 11 | Visit Site | |||
Powered by Octopart | |||||
File Download: BSS123W.PDF
[ Descriptions ]
| BSS123W Diodes - N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) 6.0Ω @ VGS = 10V ID TA = +25°C 170mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Small Servo Motor Control Power MOSFET Gate Drivers Switching Applications BSS123W N-CHANNEL ENHANCEME |
| BSS123W Fairchild Semiconductor - N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS123W N-Channel Logic Level Enhancement Mode Field Effect Transistor December 2015 BSS123W N-Channel Logic Level Enhancement Mode Field Effect Transistor Features 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V High Density Cell Design for Low RDS(ON) Rugged and Reliable Ultra Small Surface Mount Package Very Low Capacitance Fast Switching Speed Lead Free , |
Related Information
| BSS100 SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) - Siemens Semiconductor Group BSS 100 SIPMOS ® Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0V Pin 1 S Type BSS 100 Type BSS 100 BSS 100 BSS 100 Pin 2 G Marking SS 100 Pin 3 D VDS 100 V ID 0.22 A RDS(on) 6Ω Package TO-92 Ordering Code Q62702-S499 Q62702-S007 Q62702-S206 Tape and |
| BSS100 N-Channel Logic Level Enhancement Mode Field Effect Transistor - Fairchild Semiconductor September 1996 BSS100 , BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density proce |
Related Part Number
BS003F3P6 | BS170 |BSS138W | BSS149 |
BSS149 | BSC24-01N40 |