Search BSS138DW Datasheet (PDF)

Diodes Inc.
BSS138DWQ-7
Dual N-Channel MOSFET 20V 50V 3.5Ω@220mA, 10V 200mA 50pF@10V SOT-363 SMD
DistributorStock110100Link
Newark50.467Visit Site
Mouser42,6670.650.2910.256Visit Site
DigiKey72,2570.650.40.2551Visit Site
Weyland Electronics Group Pte. Ltd.236,0000.15Visit Site
Win Source236,000Visit Site
Worldway Electronics227,4620.09590.0941Visit Site
Aztech15,8540.82Visit Site
Powered by Octopart





File Download: BSS138DW.PDF


[ Descriptions ]


BSS138DW Diodes Incorporated - DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

BSS138DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed SOT-363 A D2 G1 S1 Dim A B B C Min 0.10 1.15 2.00 0.30 1.80 ¾ 0.90 0.25 0.10 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 · · · · · · Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method


Related Information


BSS100 SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) - Siemens Semiconductor Group

BSS 100 SIPMOS ® Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0V Pin 1 S Type BSS 100 Type BSS 100 BSS 100 BSS 100 Pin 2 G Marking SS 100 Pin 3 D VDS 100 V ID 0.22 A RDS(on) 6Ω Package TO-92 Ordering Code Q62702-S499 Q62702-S007 Q62702-S206 Tape and
BSS100 N-Channel Logic Level Enhancement Mode Field Effect Transistor - Fairchild Semiconductor

September 1996 BSS100 , BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density proce




Related Part Number

BS003F3P6 | BSS123W |

BS170 | BSS138W |

BSS149 | BSS149 |

This website uses cookies for personalized recommendations and by continuing to browse you agree to our Privacy Policy.