Semiconductor Informations

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| BSS138W Diodes Incorporated - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR BSS138W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · · · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed G G H K M A D SOT-323 Dim B C S Min 0.25 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 0° Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.18 8° A B C D E G H J K L M Mechanical Data Case: SOT-323, Mol |
| BSS138W Infineon Technologies AG - SIPMOS Small-Signal-Transistor BSS138W SIPMOS® Small-Signal-Transistor Features N-channel Enhancement mode Logic level dv , dt rated Product Summary V DS R DS(on),max ID 60 3.5 0.28 V Ω A SOT-323 Type BSS138W BSS138W Package SOT-323 SOT-323 Ordering Code Q67042-S4187 Q67042-S4191 Tape and Reel Information E6327: 3000 pcs, reel E6433: 10000 pcs, reel Marking SWs SWs Maximum ratings, at T j=25 °C, unless otherwis |
| BSS100 SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) - Siemens Semiconductor Group BSS 100 SIPMOS ® Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0V Pin 1 S Type BSS 100 Type BSS 100 BSS 100 BSS 100 Pin 2 G Marking SS 100 Pin 3 D VDS 100 V ID 0.22 A RDS(on) 6Ω Package TO-92 Ordering Code Q62702-S499 Q62702-S007 Q62702-S206 Tape and |
| BSS100 N-Channel Logic Level Enhancement Mode Field Effect Transistor - Fairchild Semiconductor September 1996 BSS100 , BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density proce |