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BSS149
Small Signal Field-Effect Transistor, 0.35A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
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| BSS149 Siemens Semiconductor Group - SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) SIPMOS® Small-Signal Transistor BSS 149 q q q q q q q VDS 200 V ID 0.35 A RDS(on) 3.5 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) 1 2 3 Type Ordering Code Tape and Reel Information E6325: 2000 pcs, carton; Ammopack Pin Configuration Marking Package 1 G 2 D 3 S SS149 TO-92 BSS 149 Q67000-S252 Maximum Ratings Parameter Drain-source voltage Drain-gat |
| BSS149 Siemens Semiconductor - SIPMOS Small-Signal Transistor SIPMOS® Small-Signal Transistor BSS 149 q q q q q q q VDS 200 V ID 0.35 A RDS(on) 3.5 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) 1 2 3 Type Ordering Code Tape and Reel Information E6325: 2000 pcs, carton; Ammopack Pin Configuration Marking Package 1 G 2 D 3 S SS149 TO-92 BSS 149 Q67000-S252 Maximum Ratings Parameter Drain-source voltage Drain-gat |
Related Information
| BSS100 SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) - Siemens Semiconductor Group BSS 100 SIPMOS ® Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0V Pin 1 S Type BSS 100 Type BSS 100 BSS 100 BSS 100 Pin 2 G Marking SS 100 Pin 3 D VDS 100 V ID 0.22 A RDS(on) 6Ω Package TO-92 Ordering Code Q62702-S499 Q62702-S007 Q62702-S206 Tape and |
| BSS100 N-Channel Logic Level Enhancement Mode Field Effect Transistor - Fairchild Semiconductor September 1996 BSS100 , BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density proce |
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