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BSS84 NXP Semiconductors - P-channel enhancement mode vertical D-MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET BSS84 P-channel enhancement mode vertical D-MOS transistor Product speci cation Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b 1997 Jun 18 Philips Semiconductors Product speci cation P-channel enhancement mode vertical D-MOS transistor FEATURES Low threshold voltage Direct interface to C-MOS, TTL, etc. High-speed switching No se
BSS84 Zetex Semiconductors - P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 SEPTEMBER 1995 7 PARTMARKING DETAIL SP BSS84 D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Peak Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL BVDSS VGS(th) IDSS MIN. -50 -0.8 -1.5 -1 -2 -2.0 -15 -60 -100 Gate-So



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