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BSS84,215
Power MOSFET, P Channel, 50 V, 130 mA, 10 Ohm, SOT-23 (TO-236AB), 3 Pins, Surface Mount
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| UnikeyIC | 179 | 0.0533 | Visit Site | ||
| Unikeyic (ICkey) | 179 | 0.0531 | Visit Site | ||
| Weyland Electronics Group Pte. Ltd. | 90,000 | 0.04 | Visit Site | ||
| Win Source | 500,000 | Visit Site | |||
| Classic Components | 6,120 | Visit Site | |||
| NetSource Technology | 2,930 | 0.5 | Visit Site | ||
| Esaler Electronic | 972 | 0.223 | Visit Site | ||
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File Download: BSS84.PDF
[ Descriptions ]
| BSS84 NXP Semiconductors - P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET BSS84 P-channel enhancement mode vertical D-MOS transistor Product speci cation Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b 1997 Jun 18 Philips Semiconductors Product speci cation P-channel enhancement mode vertical D-MOS transistor FEATURES Low threshold voltage Direct interface to C-MOS, TTL, etc. High-speed switching No se |
| BSS84 Zetex Semiconductors - P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 SEPTEMBER 1995 7 PARTMARKING DETAIL SP BSS84 D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Peak Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL BVDSS VGS(th) IDSS MIN. -50 -0.8 -1.5 -1 -2 -2.0 -15 -60 -100 Gate-So |
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| BSS100 N-Channel Logic Level Enhancement Mode Field Effect Transistor - Fairchild Semiconductor September 1996 BSS100 , BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density proce |
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