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BSS84AKV,115
Small Signal Field-Effect Transistor, 0.17A I(D), P-Channel, Metal-oxide Semiconductor FET
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[ Descriptions ]


BSS84AKV NXP Semiconductors - 170 mA dual P-channel Trench MOSFET

SO T6 BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 66 1.2 Features and benefits Logic-level compatible Very fast switching Tren


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