Search BT137-600E Datasheet (PDF)

WeEn Semiconductors
BT137-600E,127
WeEn Semiconductors Triac, 8ARated, TO-220ABencapsulation, 600Vpeak, Through hole mounting
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[ Descriptions ]


BT137-600E NXP Semiconductors - 4Q Triac

Philips Semiconductors Product specification Triacs sensitive gate GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. BT137 series E QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BT137Repetitive peak off-
BT137-600E HAOPIN - Sensitive Gate Triacs

TM BT137-600E HPM Sensitive Gate Triacs HAOPIN MICROELECTRONICS CO.,LTD. Description Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. Symbol T2 T1 Simplified outline Pin 1 2 3 TAB G 1 2 3 TO-220 Description Main terminal 1 (T1) Main t


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Sensitive Gate Silicon Controlled Rectifiers e w a t a Peak Off-State Voltage : 400V ◇ Repetitive D . ◇w R.M.S On-State Current (IT(RMS)=0.8 A) ◇ Low On-State Voltage (1.2V(Typ.)@ITM) w Features General Description Sensitive triggering SCR is suitable for the application where gate current l
BT100-8 Sensitive Gate Silicon Controlled Rectifiers - IK Semiconductor

Sensitive Gate Silicon Controlled Rectifiers e w a t a Peak Off-State Voltage : 600V ◇ Repetitive D . ◇w R.M.S On-State Current (IT(RMS)=0.8 A) ◇ Low On-State Voltage (1.2V(Typ.)@ITM) w Features General Description Sensitive triggering SCR is suitable for the application where gate current l




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