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| BU3150 ETC - NPN Transistor BU3150 * w w at .D w* * h S a t e e 4U m o .c NPN TO-220 TO-220 1. 2. ( Tc=25 ) BVCEO BVCBO BVEBO Icm Pcm ( Tc=25 w w w t a .D ) BVCEO BVCBO BVEBO ICEO ICBO IEBO HFE VCE (sat) tf fT S a Tjm Tstg e h U 4 t e 800 1100 9 3 50 150 55 .c m o 3. V V V A W 150 IC=1mA IC=1mA IE=1mA VCE=700V VCB=1000V VEB=7V VCE=5V IC=1A IB=0 IE=0 IC=0 IB=0 IE=0 IC=0 IC=0.2A IB=0.5A 800 1100 |
| BU3150AF ETC - NPN Transistor BU3150AF 硅 NPN 高反 大功率晶 管 * 主要用途 : 各 功率 路。 TO-220F * 主要特点: 硅三重 散平面工 、 出特性好、 流容量大。 * 封 形式: TO-220F 1 2 3 1. 基 B 2. 集 C 3. 射 E 限 :( Tc=25 ℃ ) 名 符 定 ≥ 800 ≥ 1100 ≥9 3 50 150 - 55 ~ 150 V V V A W ℃ ℃ 位 集 - 射 穿 集 -基 穿 射 -基 穿 |
| BU3071HFV Clock Generator - ROHM Semiconductor Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for |
| BU3072HFV Clock Generator - ROHM Semiconductor Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for |