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NXP Semiconductors
BUK9506-55B,127
MOSFET, TO-220AB, TH, 258W(Tc) 2V@1mA 60nC@5V 1 N-Ch 55V 5.4mΩ@25A, 10V 7.565nF@25V
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[ Descriptions ]
| BUK9506-55B NXP Semiconductors - N-channel TrenchMOSTM logic level FET BUK95, 96, 9E06-55B N-channel TrenchMOS™ logic level FET Rev. 03 30 November 2004 Product data sheet 1. Product pro le 1.1 General description N-channel enhancement mode eld-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low on-state resistance. 1.2 Features s TrenchMOS™ technology s 175 °C rated s Q10 |
Related Information
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| BUK100-50GL PowerMOS transistor Logic level TOPFET - NXP Semiconductors Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications. BUK100-50GL QUIC |
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