Semiconductor Informations
| BUT11AF Motorola Inc - POWER TRANSISTOR 5.0 AMPERES 450 VOLTS 40 WATTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUT11AF, D Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art bipolar fabrication techniques to provide excellent switching, high voltage capabil |
| BUT11AF NXP Semiconductors - Silicon Diffused Power Transistor Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AF GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PA |
| BUT100 HIGH POWER NPN SILICON TRANSISTOR - STMicroelectronics ® BUT100 HIGH POWER NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED s HIGH RUGGEDNESS APPLICATION s MOTOR CONTROL s UNINTERRUPTABLE POWER SUPPLY DESCRIPTION The BUT100 is a Multiepitaxial Planar NPN Transistor in TO |
| BUT11 Silicon diffused power transistors - NXP Semiconductors DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product speci cation Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product speci cation Silicon diffused power transistors DESCRIPTION High-voltage, |
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