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BUT11AFTU
Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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Rochester Electronics8191.11Visit Site
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BUT11AF Motorola Inc - POWER TRANSISTOR 5.0 AMPERES 450 VOLTS 40 WATTS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUT11AF, D Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art bipolar fabrication techniques to provide excellent switching, high voltage capabil
BUT11AF NXP Semiconductors - Silicon Diffused Power Transistor

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AF GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PA


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