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BUZ73A
Power Field-Effect Transistor, 5.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Rochester Electronics | 18,623 | Visit Site | |||
| Worldway Electronics | 22,409 | Visit Site | |||
| Verical | 10,370 | Visit Site | |||
| DigiKey Marketplace | 18,623 | Visit Site | |||
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File Download: BUZ73.PDF
[ Descriptions ]
| BUZ73LH Infineon - Power Transistor SIPMOS ® Power Transistor BUZ 73L H N channel Enhancement mode Avalanche-rated Logic Level . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 Pin 3 G Type D Pb-free S VDS 200 V ID 7A RDS(on) 0.4 Ω Package BUZ 73 L H PG-TO220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 28 ˚C ID A 7 Pulsed drain current TC = 25 ˚C IDpuls 28 IAR E A |
| BUZ73 Siemens Semiconductor Group - SIPMOS Power Transistor BUZ 73 SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 73 VDS 200 V ID 7A RDS(on) 0.4 Ω Package TO-220 AB Ordering Code C67078-S1317-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 7 Unit A ID IDpuls 28 TC = 28 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,perio |
Related Information
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| BUZ10 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) - Siemens Semiconductor Group BUZ 10 Not for new design SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 10 VDS 50 V ID 23 A RDS(on) 0.07 Ω Package TO-220 AB Ordering Code C67078-S1300-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 23 Uni |
Related Part Number
BUZ73A | BUZ81 |BU941ZP | BUB941ZT |
BU-61582 | BUF16821 |