Semiconductor Informations

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| BUZ73A Siemens Semiconductor Group - SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 73 A SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 73 A VDS 200 V ID 5.5 A RDS(on) 0.6 Ω Package TO-220 AB Ordering Code C67078-S1317-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 5.5 Unit A ID IDpuls 22 TC = 37 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche ene |
| BUZ73A Intersil Corporation - 5.8A/ 200V/ 0.600 Ohm/ N-Channel Power MOSFET BUZ73A Semiconductor Data Sheet October 1998 File Number 2263.1 5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET Features 5.8A, 200V [ , Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.600Ω (BUZ73 eld effect transistor designed for applications such as SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, , Subject relay |
| BUZ10 N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET - STMicroelectronics ® BUZ10 N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET™ MOSFET T YPE BUZ 10 s s s s s V DSS 50 V R DS(o n) < 0.07 Ω ID 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 1 2 APPLICATIONS HIGH CURRENT, H |
| BUZ10 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) - Siemens Semiconductor Group BUZ 10 Not for new design SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 10 VDS 50 V ID 23 A RDS(on) 0.07 Ω Package TO-220 AB Ordering Code C67078-S1300-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 23 Uni |