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Intersil
BUZ73A
Power Field-Effect Transistor, 5.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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[ Descriptions ]


BUZ73A Siemens Semiconductor Group - SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ 73 A SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 73 A VDS 200 V ID 5.5 A RDS(on) 0.6 Ω Package TO-220 AB Ordering Code C67078-S1317-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 5.5 Unit A ID IDpuls 22 TC = 37 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche ene
BUZ73A Intersil Corporation - 5.8A/ 200V/ 0.600 Ohm/ N-Channel Power MOSFET

BUZ73A Semiconductor Data Sheet October 1998 File Number 2263.1 5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET Features 5.8A, 200V [ , Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.600Ω (BUZ73 eld effect transistor designed for applications such as SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, , Subject relay


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