Semiconductor Informations

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| BUZ74 Siemens Semiconductor Group - SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 74 SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 74 VDS 500 V ID 2.4 A RDS(on) 3Ω Package TO-220 AB Ordering Code C67078-S1314-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 2.4 Unit A ID IDpuls 9.5 TC = 30 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,pe |
| BUZ74A Siemens Semiconductor Group - SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 74 A SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 74 A VDS 500 V ID 2.1 A RDS(on) 4Ω Package TO-220 AB Ordering Code C67078-S1314-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 2.1 Unit A ID IDpuls 8.5 TC = 27 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energ |
| BUZ10 N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET - STMicroelectronics ® BUZ10 N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET™ MOSFET T YPE BUZ 10 s s s s s V DSS 50 V R DS(o n) < 0.07 Ω ID 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 1 2 APPLICATIONS HIGH CURRENT, H |
| BUZ10 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) - Siemens Semiconductor Group BUZ 10 Not for new design SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 10 VDS 50 V ID 23 A RDS(on) 0.07 Ω Package TO-220 AB Ordering Code C67078-S1300-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 23 Uni |