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BUZ74
Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
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[ Descriptions ]


BUZ74 Siemens Semiconductor Group - SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ 74 SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 74 VDS 500 V ID 2.4 A RDS(on) 3Ω Package TO-220 AB Ordering Code C67078-S1314-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 2.4 Unit A ID IDpuls 9.5 TC = 30 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,pe
BUZ74A Siemens Semiconductor Group - SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ 74 A SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 74 A VDS 500 V ID 2.1 A RDS(on) 4Ω Package TO-220 AB Ordering Code C67078-S1314-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 2.1 Unit A ID IDpuls 8.5 TC = 27 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energ


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BUZ 10 Not for new design SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 10 VDS 50 V ID 23 A RDS(on) 0.07 Ω Package TO-220 AB Ordering Code C67078-S1300-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 23 Uni




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