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BUZ90A
Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Best Source | 13,379 | 0.499 | Visit Site | ||
| Quest | 195 | 10.5 | Visit Site | ||
| ComSIT Distribution GmbH | 19 | Visit Site | |||
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[ Descriptions ]
| BUZ90A Siemens Semiconductor Group - SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 90 A SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 90 A VDS 600 V ID 4A RDS(on) 2Ω Package TO-220 AB Ordering Code C67078-S1321-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 4 Unit A ID IDpuls 16 TC = 30 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,peri |
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| BUZ10 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) - Siemens Semiconductor Group BUZ 10 Not for new design SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 10 VDS 50 V ID 23 A RDS(on) 0.07 Ω Package TO-220 AB Ordering Code C67078-S1300-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 23 Uni |
Related Part Number
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