Semiconductor Informations
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File Download: BUZ91A.PDF
[ Descriptions ]
| BUZ91A Siemens Semiconductor Group - SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 91 A SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 91 A VDS 600 V ID 8A RDS(on) 0.9 Ω Package TO-220 AB Ordering Code C67078-S1342-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 8 Unit A ID IDpuls 32 TC = 33 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,p |
| BUZ91AF Siemens - 600V / 8A / SIPMOS Power Transistor |
Related Information
| BUZ10 N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET - STMicroelectronics ® BUZ10 N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET™ MOSFET T YPE BUZ 10 s s s s s V DSS 50 V R DS(o n) < 0.07 Ω ID 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 1 2 APPLICATIONS HIGH CURRENT, H |
| BUZ10 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) - Siemens Semiconductor Group BUZ 10 Not for new design SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 10 VDS 50 V ID 23 A RDS(on) 0.07 Ω Package TO-220 AB Ordering Code C67078-S1300-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 23 Uni |
Related Part Number
BUZ73A | BUZ81 |BU941ZP | BUB941ZT |
BU-61582 | BUF16821 |