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| BZX399 NXP Semiconductors - Voltage regulator diodes DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 BZX399 series Voltage regulator diodes Product speci cation 1999 Jun 04 Philips Semiconductors Product speci cation Voltage regulator diodes FEATURES Total power dissipation: max. 300 mW Tolerance: ±5% Working voltage range: nom. 1.8 to 43 V (E24 range) Improved IZ, VZ characteristic at low currents (IZ = 50 A). This results in a |
| BZX399-C10 NXP Semiconductors - Voltage regulator diodes DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 BZX399 series Voltage regulator diodes Product speci cation 1999 Jun 04 Philips Semiconductors Product speci cation Voltage regulator diodes FEATURES Total power dissipation: max. 300 mW Tolerance: ±5% Working voltage range: nom. 1.8 to 43 V (E24 range) Improved IZ, VZ characteristic at low currents (IZ = 50 A). This results in a |
Related Information
| BZX10 Zener Diode - COS ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju |
| BZX10 Zener Diode - COS w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w |
Related Part Number
BZV14 | BZX97 |BZX84 | BZY97-C11 |
BZY97 | BZT52C2V0T |