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[ Descriptions ]


C1008 TRANSYS Electronics Limited - NPN Transistor - 2SC1008

Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1008 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-92 1. EMITTER 0.8 W (Tamb=25℃) 2. BASE Collector current ICM: 0.7 A Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 3. COLLECTOR 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter C
C1008 Weitron - NPN Plastic-Encapsulate Transistor

WEITRON NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 2SC1008 1. EMITTER 2. COLLECTOR 3. BASE TO-92 MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Collector-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO ICM PCM TJ Tstg Value 80 0.7 0.8 -55 to +150 -55 to +150 Units V A W °C °C ELECTRICAL CHARACTERISTICS (Tamb=25°


Related Information


C1008 NPN Transistor - 2SC1008 - TRANSYS Electronics Limited

Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1008 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-92 1. EMITTER 0.8 W (Tamb=25℃) 2. BASE Collector current ICM: 0.7 A Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range
C1008 NPN Plastic-Encapsulate Transistor - Weitron

WEITRON NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 2SC1008 1. EMITTER 2. COLLECTOR 3. BASE TO-92 MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Collector-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO ICM PCM TJ Tstg




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