Semiconductor Informations
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| C1815 Toshiba Semiconductor - Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications) 2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA), hFE (IC = 2 mA) = 0.95 (typ.) Low noise: NF = 1dB (typ.) at f = 1 k |
| C1815 Jiangsu Changjiang Electronics Technology - Plastic Encapsulate Transistors JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction and Storage Temperature Value -60 -50 -5 150 2 |
| C1815 NPN Plastic-Encapsulate Transistors - WEITRON C1815 NPN Plastic-Encapsulate Transistors P b Lead(Pb)-Free FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous 60 V 50 |
| C1815 NPN Transistor - RECTRON C1815 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.15 mA * Collector-base voltage V(BR)CBO : 60 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded pl |